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dc.contributor.authorLin, Chia-Shengen_US
dc.contributor.authorChen, Ying-Chungen_US
dc.contributor.authorChang, Ting-Changen_US
dc.contributor.authorLi, Hung-Weien_US
dc.contributor.authorHsu, Wei-Cheen_US
dc.contributor.authorChen, Shih-Chingen_US
dc.contributor.authorTai, Ya-Hsiangen_US
dc.contributor.authorJian, Fu-Yenen_US
dc.contributor.authorChen, Te-Chihen_US
dc.contributor.authorTu, Kuan-Jenen_US
dc.contributor.authorWu, Hsing-Huaen_US
dc.contributor.authorChen, Yi-Chanen_US
dc.date.accessioned2014-12-08T15:07:52Z-
dc.date.available2014-12-08T15:07:52Z-
dc.date.issued2010en_US
dc.identifier.issn0013-4651en_US
dc.identifier.urihttp://hdl.handle.net/11536/6191-
dc.identifier.urihttp://dx.doi.org/10.1149/1.3265456en_US
dc.description.abstractThis work investigates negative bias temperature instability (NBTI) in low temperature polycrystalline silicon thin film transistors (LTPS TFTs) in a darkened and in an illuminated environment of different light intensities. Experimental results reveal that the generations of interface state density (N(it)) are identical under various illuminated intensity NBTI stresses. Nevertheless, the degradation of the grain boundary trap (N(trap)) under illumination was more significant than that for the darkened environment, with degradation increasing as illumination intensity increases. This phenomenon is mainly caused by the extra number of holes generated during the illuminated NBTI stress. The increased N(trap) degradation leads to an increase in the darkened environment leakage current. This indicates that more traps are generated in the drain junction region than from carrier tunneling via the trap, resulting in leakage current. Conversely, an increase in N(trap) degradation results in a decrease in the photoleakage current. This indicates that the number of recombination centers increases in the poly-Si bulk, affecting photosensitivity in LTPS TFTs.en_US
dc.language.isoen_USen_US
dc.subjectelectron trapsen_US
dc.subjectelectron-hole recombinationen_US
dc.subjectelemental semiconductorsen_US
dc.subjectgrain boundariesen_US
dc.subjectinterface statesen_US
dc.subjectleakage currentsen_US
dc.subjectsiliconen_US
dc.subjectthin film transistorsen_US
dc.subjecttunnellingen_US
dc.titleDegradation of Low Temperature Polycrystalline Silicon Thin Film Transistors under Negative Bias Temperature Instability Stress with Illumination Effecten_US
dc.typeArticleen_US
dc.identifier.doi10.1149/1.3265456en_US
dc.identifier.journalJOURNAL OF THE ELECTROCHEMICAL SOCIETYen_US
dc.citation.volume157en_US
dc.citation.issue2en_US
dc.citation.spageJ29en_US
dc.citation.epageJ33en_US
dc.contributor.department光電工程學系zh_TW
dc.contributor.department顯示科技研究所zh_TW
dc.contributor.departmentDepartment of Photonicsen_US
dc.contributor.departmentInstitute of Displayen_US
dc.identifier.wosnumberWOS:000273222700084-
dc.citation.woscount3-
Appears in Collections:Articles


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