陽極氧化技術在MIM二極體及複晶矽元件的應用

Abstract

本論文主要探討陽極氧化Ta2O5膜在液晶顯示器上的應用以及陽極氧化複 晶矽上二氧化矽膜的特性. 首先, 我們使用在室溫下陽極氧化成長的Ta2 O5膜做成鋁/Ta2O5/鉭的金屬絕緣層金屬元件. 我們發現此元件具有非線 性與對稱性的電流-電壓曲線, 所以很適合當開關元件. 因此使用室溫下 陽極氧化成長的Ta2O5膜當作金屬絕緣層金屬元件的絕緣層, 金屬絕緣層 金屬液晶顯示器做在塑膠基版上將是可行的. 另一方面, 我們也探討了陽極氧化複晶矽上二氧化矽膜的特性. 我們發現 利用陽極氧化成長複晶矽上二氧化矽膜比傳統利用高溫爐管或快速高溫氧 化成長的複晶上二氧化矽膜具有更低的漏電流與較高的崩潰電場. 因此陽 極氧化成長複晶矽上二氧化矽膜非常適合於非揮發性記憶體上的應用. In this thesis, characteristics of anodic Ta2O5 film used as MIM insulator and anodic SiO2 on polysilicon have been studied. A low temperature Al/Ta2O5/Ta MIM element was fabricated using room temperature anodic Ta2O5 film as insulator. We found that it has nonlinear and symmetric I-V characteristics suitable for switching element. With the room temperature anodic Ta2O5 film as insulator in MIM structure, MIM-LCD can be fabricated on plastic substrate. On the other hand, anodic SiO2 on polysilicon was also discussed. We found that anodic polyoxide has a desirable characteristics for nonvolatile memory, i.e., a lower leakage current and a higher breakdown electric field than conventional polyoxide grown by furnace or RTO.