完整後設資料紀錄
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dc.contributor.author許韶閔en_US
dc.contributor.authorHsu, Shiao-Minen_US
dc.contributor.author吳錦川en_US
dc.contributor.authorJiin-chuan Wuen_US
dc.date.accessioned2014-12-12T02:17:29Z-
dc.date.available2014-12-12T02:17:29Z-
dc.date.issued1996en_US
dc.identifier.urihttp://140.113.39.130/cdrfb3/record/nctu/#NT850428067en_US
dc.identifier.urihttp://hdl.handle.net/11536/61937-
dc.description.abstract隨著時代巨輪的推進,事物也一代代地跟著改變.近年來,個人可攜式 通訊系統是一個熱門的課題. 然而,這一波可攜式改革旋風已經持續了多 年.針對個人可攜式系統來說,它要求低電壓及低功率消耗之組件. 而互補 式金氧半電晶體積體電路(CMOS Integrated Circuit)是很合適用來發展 此一系統 隨著金氧半電晶體之通道長度之逐年縮減,互補式金氧半電晶體之射頻積 體電路(CMOS RF-IC)已逐步能夠在今日之技術下實現, 但仍有許多問題仍 待解決.一個完全不加額外零件的單一晶片系統仍是工業界及學術界的一 大挑戰!! 本論文述及一個家 用無線電之實驗系統,主要包括射頻( Radio Frequency ) 以及中頻( Intermediate Frequency)之混波和濾波(mixing and filtering)而不包 括解調部份之電 路.而此系統中之混波器, 我們乃是採用了一個類似 Gilbert Cell 之結構去實現射頻的一次和中頻的二次混波,另外二個全差 動運算放大器( Fully differential Operation Amplifier)做為中 頻之濾波及放大之用. 另有一單端輸出傳統架構之運算放大器 (Traditional Operation Amplifier ) 做為最後一級放大及推動晶片外 負載之用. 此晶片已交由CIC(國科會晶片實現中心)下線製做.此晶片所佔 面積為23008*2297.45平方毫米而且在三伏電壓操做下消耗約3.14mW 的功 率. Time is changing, and things are changing, too. In recent years, PCS( Personal communication system ) is a hot topic. However, the portable revolution has been going on for many years. PCS working under battery supplyrequires low supply voltage and low power components, and it seems that CMOS IC( Complementary Metal Oxide Semiconductor Integrated Circuit ) is suitable.With the channel length of CMOS transistor scaling down year by year, CMOS RF--ICs are practical today, but there are still a lot of difficulties unsolved. The goal toward one chip system ( with only supply, needed inputs but without any additional components ) is a major challenge. This thesis describes a simple experimental system for indoor Cord-less Telephone. We implement the RF ( Radio Frequency ) and IF ( Intermediate Frequency ) mixing and filtering ( Demodulation and PLL are not included ). We utilize the Gilbert-like structure to implement the two mixers, two folded-cascode differential Op-Amps for IF filtering and IF Amplifying, and one single-ended OPAMP for power amplifying and off-chip loads driving. The chip has already fabricated by CIC( Chip Implementation Center) and the chip size is 2300*2297.45 micrometer square. The chip consumes total about 3.14mW at 3V voltage supply operating.zh_TW
dc.language.isozh_TWen_US
dc.subject運算放大器zh_TW
dc.subject混波器zh_TW
dc.subject濾波器zh_TW
dc.subject家用無線電zh_TW
dc.subject射頻積體電路zh_TW
dc.subjectmixeren_US
dc.subjectOPAMPen_US
dc.subjectGilbert Cellen_US
dc.subjectCMOS RF-ICen_US
dc.subjectband-pass filteren_US
dc.title混波器之設計zh_TW
dc.titleDesign of CMOS mixeren_US
dc.typeThesisen_US
dc.contributor.department電子研究所zh_TW
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