電容式壓力感測計

Abstract

半導體感測計的製造程序通常是從積體電路的製程中所衍生出來的. 進 一步說, 這些特殊的製程包括了形成薄膜之非等向性蝕刻以及形成懸空的 樑或薄膜之犧牲層技術. 根據這些半導體感測計的大小以及間距約在幾個 毫微米之譜, 通常這些製程叫做微小機電技術. 這篇論文的重點集中在 電容式壓力感測計的製造過程, 也就是說, 詳細的製程研究將被提出. 特 別在於氫氧化鉀之非等向性蝕刻, 硼擴散層的形成, 以及陽極接合程序. 另一方 面, 我們也將提出感測計的量測設備及量測結果. Semiconuctor sensors are usually fabricated using processes that is developedfor integrated circuits;furthermore,many specialized fabrication steps includeanisotropic etching to form diaphragm, and the use of sacrificial layers toform free- standing beams or membranes is needed.Those processes are refered toas micromachining, according to the feature dimensions of the sensors are of the order of micros, and the spacing between sensor parts maybe one micro orless. The key point of this thesis focuses on the fabrication processes of the cap- acitive pressure sensor;consequently, a detailed study of processes will beshown,especially in KOH anisotropic etching,p+ layer formation,and anodic bonding process. On the other hand, we will also show the measurement and testingresults of this sensor respectively.