Title: ELO技術在砷化鎵系列光調變器的應用
Applications of ELO Technology on GaAs Based Optical Modulators
Authors: 李秉奇
Lee, Bing-Chi
李建平
Lee Chien-Ping
電子研究所
Keywords: 砷化鎵;光調變器;ELO;ELO;GaAs;optical modulators
Issue Date: 1996
Abstract: 在本論文中,我們研究使用磊晶剝離(ELO)技術將砷化鎵/鋁砷化鎵
多重量子井結構移植到三種事先分別鍍上金、矽/二氧化矽及矽/氧化鋁等
四分之一波長堆積層(quarterwave stacks)在矽晶基板上來當作外加的
鏡射面以形成反射式asymmetric Fabry-Perot光調變器(AFPM),並比較
此種光調變器之調變特性。其中,以五層矽/氧化鋁作為外加鏡射面的調
變器在外加偏壓13V時展現了優越的反射率差59.31%。 此外,我們
也考慮調變器的操作電壓問題。為了降低操作電壓,我們額外成長了兩層
DBR來作為最上層之反射面。其中,以五層矽/氧化鋁作為外加鏡射面的調
變器在外加偏壓6時展現了優越的調變特性54.93%。
We study and compare the modulation characteristics of
reflection-type asymmetric Fabry-Perot modulators (AFPM)
achieved by Epitaxially Lifting-off (ELO) the GaAs/AlGaAs
multiple quantum well structure onto a Si substrate coated with
Au or Si/SiO2 or Si/Al2O3 quarterwave stacks as external
mirrors. The modulator with only a five pairs of Si/Al2O3 as the
external mirror showed excellent on/off characteristics with a
59.31% change in reflectivity for a 13V applied voltage swing.
Besides, we also consider the operating voltage of modulators.
In order to lower the operating voltage, we fabricated an
additional structure, a two pairs of DBR (AlAs/Al0.1Ga0.9As), to
act as the top mirror. The modulation characteristics of ELO
modulator grafted to Si/Al2O3 on Si exhibited an absolute
reflectivity change of 54.93% for a 6V bias swing.
URI: http://140.113.39.130/cdrfb3/record/nctu/#NT850428088
http://hdl.handle.net/11536/61960
Appears in Collections:Thesis