ELO技術在砷化鎵系列光調變器的應用

Abstract

在本論文中，我們研究使用磊晶剝離（ELO）技術將砷化鎵/鋁砷化鎵 多重量子井結構移植到三種事先分別鍍上金、矽/二氧化矽及矽/氧化鋁等 四分之一波長堆積層（quarterwave stacks）在矽晶基板上來當作外加的 鏡射面以形成反射式asymmetric Fabry-Perot光調變器（AFPM），並比較 此種光調變器之調變特性。其中，以五層矽/氧化鋁作為外加鏡射面的調 變器在外加偏壓13V時展現了優越的反射率差59.31%。 此外，我們 也考慮調變器的操作電壓問題。為了降低操作電壓，我們額外成長了兩層 DBR來作為最上層之反射面。其中，以五層矽/氧化鋁作為外加鏡射面的調 變器在外加偏壓6時展現了優越的調變特性54.93%。 We study and compare the modulation characteristics of reflection-type asymmetric Fabry-Perot modulators (AFPM) achieved by Epitaxially Lifting-off (ELO) the GaAs/AlGaAs multiple quantum well structure onto a Si substrate coated with Au or Si/SiO2 or Si/Al2O3 quarterwave stacks as external mirrors. The modulator with only a five pairs of Si/Al2O3 as the external mirror showed excellent on/off characteristics with a 59.31% change in reflectivity for a 13V applied voltage swing. Besides, we also consider the operating voltage of modulators. In order to lower the operating voltage, we fabricated an additional structure, a two pairs of DBR (AlAs/Al0.1Ga0.9As), to act as the top mirror. The modulation characteristics of ELO modulator grafted to Si/Al2O3 on Si exhibited an absolute reflectivity change of 54.93% for a 6V bias swing.