利用多晶矽鍺硼為源之固相擴散法形成超淺P型接面的研究

Abstract

為了在未來超大型積體電路上的應用, 0.1微米通道長度的電晶體已被持 續的研究。 當元件尺吋縮小到短於0.1微米時, 為了防止短通道效應, 超 淺的源極及汲極接面深度是必須的。 同時, 為了減小在源極及汲極的寄 生電阻, 在此區域的摻雜濃度必須提高到相當的程度。 在本論文 中, 我們利用多晶矽鍺硼為源的快速熱擴散法可以得到非常淺以及高濃度 的硼原子分布情形。 此外, 在簡單的快速熱處理後, 所得到的二極體有 相當好的電性(很小的反向漏電流以及趨近於一的理想因子)。相對於俱有 相同深度BF2+離子佈植的接面, 固相擴散法可以穫得較低的片電阻以及非 長高的表面濃度。 Extensive studies of 0.1 mm MOSFETs have been carried out for application in future ULSI. As device dimensions fall to 0.1 mm and below, ultra-shallow source and drain junctions will become essential to prevent short-channel effects. At the same time, the dopant concentration in the source and drain regions should be sufficiently high to reduce parasitic resistance in these regions. In this thesis, we have shown that the use of rapid thermal diffusion of dopant from Poly-SiGeB layer can provide very shallow and high concentration boron profiles. In additional, junction diodes displayed excellent characteristics after a simple RTA anneal with very low reverse leakage currents and near ideal forward slope. Compare with a standard BF2+ implanted junction of similar depth, the advantages of solid phase diffusion process are found in the low sheet resistivity and high surface conc