完整後設資料紀錄
DC 欄位 | 值 | 語言 |
---|---|---|
dc.contributor.author | Huang, Ping-Wei | en_US |
dc.contributor.author | Wu, YewChung Sermon | en_US |
dc.date.accessioned | 2014-12-08T15:07:53Z | - |
dc.date.available | 2014-12-08T15:07:53Z | - |
dc.date.issued | 2010 | en_US |
dc.identifier.issn | 1099-0062 | en_US |
dc.identifier.uri | http://hdl.handle.net/11536/6209 | - |
dc.identifier.uri | http://dx.doi.org/10.1149/1.3339558 | en_US |
dc.description.abstract | An AlGaInP-based vertical light emitting diode (LED) comprising double roughened (GaP and n-AlGaInP) surfaces and a bottom metal reflector was fabricated by surface-etching and wafer-bonding technologies. The roughened GaP surface was created by photolithography and wet etching, while the AlGaInP surface was roughened by inductively coupled plasma dry etching. The output power of the double roughened LED could reach 5.88 mW, which was 2.56 times higher than that of the conventional LED. This is because the double roughened surfaces can provide photons multiple chances to escape from the LED surface and can redirect photons. | en_US |
dc.language.iso | en_US | en_US |
dc.subject | aluminium compounds | en_US |
dc.subject | etching | en_US |
dc.subject | gallium compounds | en_US |
dc.subject | III-V semiconductors | en_US |
dc.subject | indium compounds | en_US |
dc.subject | light emitting diodes | en_US |
dc.subject | photolithography | en_US |
dc.subject | surface roughness | en_US |
dc.subject | wafer bonding | en_US |
dc.title | Output Power of AlGaInP Light Emitting Diode Improved by Double Roughening AlGaInP Surfaces | en_US |
dc.type | Article | en_US |
dc.identifier.doi | 10.1149/1.3339558 | en_US |
dc.identifier.journal | ELECTROCHEMICAL AND SOLID STATE LETTERS | en_US |
dc.citation.volume | 13 | en_US |
dc.citation.issue | 5 | en_US |
dc.citation.spage | H163 | en_US |
dc.citation.epage | H165 | en_US |
dc.contributor.department | 材料科學與工程學系 | zh_TW |
dc.contributor.department | Department of Materials Science and Engineering | en_US |
dc.identifier.wosnumber | WOS:000275660200022 | - |
dc.citation.woscount | 2 | - |
顯示於類別: | 期刊論文 |