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dc.contributor.author林俊儀en_US
dc.contributor.authorLin, Chun-Yien_US
dc.contributor.author謝正雄en_US
dc.contributor.authorShie, Jin-Shownen_US
dc.date.accessioned2014-12-12T02:18:05Z-
dc.date.available2014-12-12T02:18:05Z-
dc.date.issued1996en_US
dc.identifier.urihttp://140.113.39.130/cdrfb3/record/nctu/#NT853124027en_US
dc.identifier.urihttp://hdl.handle.net/11536/62318-
dc.description.abstract本研究旨在利用反射式干涉濾波器的結構設計微熱輻射偵測元件對紅外線的吸收現象。文中利用電磁波理論推導元件對紅外線的反射及吸收係數,並運用薄膜光學理論模擬不同的熱輻射吸收金屬材料及不同的元件結構在波長8-14μm 的吸收率。結合理論推導與模擬分析的結果,在適當的選擇金屬材料及結構設計調整下,元件對紅外線的最佳吸收率可高達 90% 以上。本研究的結構可應用於微熱輻射元件的匹配製程。文後並討論可能的實用例子。zh_TW
dc.description.abstractThe author studies the absorption effect of radiation in infrared region of bolometer designed with the structure of reflection interference filter. We deduce the infrared reflection and absorption coefficients of device by EM-Wave theory and simulate the infrared absorptance of device in the region 8~14 μm for different metals and structures of device by optical thin film theory. Incorporating the optimal result of deduction and simulation, the infrared absorptance of device will exceed 90% if we adopt proper structure parameters of device and choice a specific metal. The structure, which is studied, would be compatible with the process of microbolometer. Finally, we analyze and discuss some examples for practical purposes.en_US
dc.language.isozh_TWen_US
dc.subject微熱輻射偵測計zh_TW
dc.subject薄膜的紅外線吸收zh_TW
dc.subject薄膜光學理論zh_TW
dc.subjectmicrobolometeren_US
dc.subjectthe absorption of thin film in infrareden_US
dc.subjectoptical thin film theoryen_US
dc.subjectreflection interference filteren_US
dc.title為微熱輻射元件用之紅外線吸收層之設計分析zh_TW
dc.titleDesign Analysis of Structure of Infrared Absorption for Microbolometeren_US
dc.typeThesisen_US
dc.contributor.department光電工程學系zh_TW
Appears in Collections:Thesis