Low-Temperature (≦700℃) Fabrication of Interpolysilicon Oxide and Its Impact on Tunnel Oxide

Abstract

The low-temperature (≦700℃) fabrication of interpolysilicon oxide and its impact ontunnel oxide is studied. This process combines the in-situ phosphorus dopedpolysilicon and TEOS deposited oxide. The obtained interpolysilicon oxide has superior electrical characteristics such as lower conductivity, higherbreakdown electric field, and higher Qbd than those of conventional interpolysilicon oxide. Moreover, during fabricating interpolysilicon oxide , the post-polsilicon gate- process-induced degradation such as Qbd and stress-induced leakage current degradation of tunnel oxide can be evidently lessenedby this method.