Reactive Ion Etch of Ⅲ-Ⅴ Compound Semiconductor

Abstract

In this thesis , Reactive Ion Etch of GaP,InGaP,GaN in BCl3/ Ar plasmais studied. The best etching conditions and mask materials are suggested.Higher etch rates and better etched features and sharp side wall profilescan be obtained with higher Ar fraction. Under lower pressure conditions,higher ion density, cleaner etched features and enhanced ion bombardmentin the vertical direction are observed.It is confirmed that etching materials with strong chemical bonds, such as GaN ,requires high ion densityor ion energy. Experiments also show that nickel film is the most stable maskmaterial, compared to SiOx and photoresist.