| 標題: | 砷化鎵與磷化銦鎵上金屬接觸與離子佈植之研究 Study of metal contacts and ion implantations on GaAs and inGaP |
| 作者: | 翟駿逸 鄭晃忠 電子研究所 |
| 公開日期: | 1996 |
| URI: | http://140.113.39.130/cdrfb3/record/nctu/#NT856430103 http://hdl.handle.net/11536/62537 |
| Appears in Collections: | Thesis |
- 應用於高載子遷移率半導體的多層金屬歐姆接觸製作與分析 / 陳宜鴻;林俊廷;陳仕鴻;Chen,Yi-Hung;Lin,Jun-Ting
- Investigation of GaN LED with Be-implanted Mg-doped GaN layer / Huang, HW;Kao, CC;Chu, JT;Kuo, HC;Wang, SC
- Electrical properties of multiple high-dose Si implantation in p-GaN / Lai, WC;Yokoyama, M;Tsai, CC;Chang, CS;Guo, JD
- As+-implanted AlGaAs oxide-confined VCSEL with enhanced oxidation rate and high performance uniformity / Laih, LH;Kuo, HC;Lin, GR;Laih, LW;Wang, SC
- 應用鈀/鍺/銅歐姆接觸至全面銅金屬化之磷化銦鎵/砷化鎵異質接面雙載子電晶體 / 林家慶;Chia-Ching Lin;張翼;Edward Yi Chang
- 應用鈀/鍺/銅歐姆接觸至砷化銦鎵之全面銅金屬化磷化銦鎵/砷化鎵異質接面雙載子電晶體 / 謝勝禮;Sheng-Li Shie;張翼;Edward Yi Chang
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