| 標題: | 應用於金氧半元件之高密度電漿蝕刻之研究 Study of high density plasma etching for MOS devices |
| 作者: | 康宗貴 鄭晃忠 電子研究所 |
| 公開日期: | 1996 |
| URI: | http://140.113.39.130/cdrfb3/record/nctu/#NT856430109 http://hdl.handle.net/11536/62543 |
| 顯示於類別： | 畢業論文 |
- A novel two-step etching process for reducing plasma-induced oxide damage / You, KF;Wu, CY
- Plasma charging damage during contact hole etch in high-density plasma etcher / Tsui, BY;Lin, SS;Tsai, CS;Hsia, CC
- Plasma-induced charging damage in ultrathin (3-nm) gate oxides / Chen, CC;Lin, HC;Chang, CY;Liang, MS;Chien, CH
- A novel two-step etching to suppress the charging damages during metal etching employing helicon wave plasma / Cheng, HC;Lin, W;Kang, TK;Perng, YC;Dai, BT
- Simultaneous etching of polysilicon materials with different doping types by low-damage transformer-coupled plasma technique / Hung, CC;Lin, HC;Wang, MF;Huang, TY;Shih, HC
Loading...