光阻曝光及顯影過程之模擬

Abstract

我們發展了一套半導體製程中微影步驟的模擬程式，可以計算曝光系統在 光阻中產生的潛像，並依此潛像得出顯影後的光阻外型。其中包括光學投 影系統的模擬方法，以及將光阻視為薄膜來計算光阻中的潛像光強分布， 並以Dill及Mack模型得出及顯影速率分布，最後利用最小作用量原理及 Runge-Kutta數值方法算出顯影後的光阻外型。論文中以接觸孔、獨立線 及連續孔線為例，示範了計算的結果。 We develop a microlithography simulation program that can calculate the latent image in the photoresist and the profile of resist after development. In the thesis, we model the exposure- projection system, treat photoresist as thin-film, adopt Dill model and Mack model to evaluate the PAC concentration and developing speed respectively, and finally utilize the least action principle together with Runge-Kutta numerical method to get the resist profile. Simulation results of contact holes, isolate lines and line/space patterns are given as examples.