完整後設資料紀錄
DC 欄位 | 值 | 語言 |
---|---|---|
dc.contributor.author | 李世傑 | en_US |
dc.contributor.author | Lee, Shih-Chieh | en_US |
dc.contributor.author | 賴映杰 | en_US |
dc.contributor.author | Y. Lai | en_US |
dc.date.accessioned | 2014-12-12T02:18:30Z | - |
dc.date.available | 2014-12-12T02:18:30Z | - |
dc.date.issued | 1997 | en_US |
dc.identifier.uri | http://140.113.39.130/cdrfb3/record/nctu/#NT860124002 | en_US |
dc.identifier.uri | http://hdl.handle.net/11536/62655 | - |
dc.description.abstract | 我們發展了一套半導體製程中微影步驟的模擬程式,可以計算曝光系統在 光阻中產生的潛像,並依此潛像得出顯影後的光阻外型。其中包括光學投 影系統的模擬方法,以及將光阻視為薄膜來計算光阻中的潛像光強分布, 並以Dill及Mack模型得出及顯影速率分布,最後利用最小作用量原理及 Runge-Kutta數值方法算出顯影後的光阻外型。論文中以接觸孔、獨立線 及連續孔線為例,示範了計算的結果。 We develop a microlithography simulation program that can calculate the latent image in the photoresist and the profile of resist after development. In the thesis, we model the exposure- projection system, treat photoresist as thin-film, adopt Dill model and Mack model to evaluate the PAC concentration and developing speed respectively, and finally utilize the least action principle together with Runge-Kutta numerical method to get the resist profile. Simulation results of contact holes, isolate lines and line/space patterns are given as examples. | zh_TW |
dc.language.iso | zh_TW | en_US |
dc.subject | 潛像光強 | zh_TW |
dc.subject | 光活性化合物濃度 | zh_TW |
dc.subject | 最小作用量原理 | zh_TW |
dc.subject | latent image | en_US |
dc.subject | PAC concentration | en_US |
dc.subject | least action principle | en_US |
dc.title | 光阻曝光及顯影過程之模擬 | zh_TW |
dc.title | Simulation of Photoresist Exposure and Development | en_US |
dc.type | Thesis | en_US |
dc.contributor.department | 光電工程學系 | zh_TW |
顯示於類別: | 畢業論文 |