核心層光電子激發術對雷射加熱在Si(100)表面上成長GeHn薄膜現象的研究

Abstract

在這個研究中,我們對digermane (Ge2H6) 吸附在Si(100)-(2x1)表面上加 熱,觀察表面上的核心層光電子發射圖的變化,我們使用同步輻射光作為我 們的光源.在不同的加熱溫度中觀察GeH, GeH2,和 SiH 的H 脫離表面. 在 室溫下(325 k),digermane會分裂成GeH3, GeH2, GeH, 和SiH等吸附物.隨 著溫度上升,我們觀察到GeH3, GeH2的裂解和H 脫離 GeH 和 SiH 吸附物. 我們觀察Ge 3d和 Si 2p核心層光電子發射圖,解是隨著溫度的上升圖形的 形狀隨著不同的吸附物在Si(100)-(2x1)表面上的演化過程.此外,我們使 用Q-switch Nd:YAG脈衝雷射照射GeHn/Si(100)-(2x1)表面,表面上相關的 核心層光電子發射圖中S分量和S'分量的變化. In the study, we examine the adsorption and thermal reaction of digermane (Ge2H6)on the Si(100)-(2x1) with high-resolution core- level photoemission spectroscopy using synchrotron radiation. At room temperature (325 K), the digermane dissociatively chemisorbed to produce GeH3, GeH2, GeH and SiH, species. Successiveannealing of digermane-saturated surface to higher temperature causes further decomposition og GeH3 and GeH2 and the desorption H from GeH and Sih, leaving atomic Ge on the surface. In light of the sufficiently large chemical and surface shiftsin their core-level binding energies for different surface species, those processes were identified by examining the evolution of Ge 3d and Si 2p line shapes. We alsoused Q-switch Nd:YAG pulsed laser (532 nm,5 ns) that irradiated GeHn/ Si(100)-(2x1)surface, and observed the changes of S component and S' component of Ge 3d spectrums.