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dc.contributor.authorTsai, Ho-Chengen_US
dc.contributor.authorChang, Yu-Chenen_US
dc.contributor.authorWu, Pu-Weien_US
dc.date.accessioned2014-12-08T15:08:02Z-
dc.date.available2014-12-08T15:08:02Z-
dc.date.issued2010en_US
dc.identifier.issn1099-0062en_US
dc.identifier.urihttp://hdl.handle.net/11536/6298-
dc.identifier.urihttp://dx.doi.org/10.1149/1.3265971en_US
dc.description.abstract4-Amino-2,1,3-benzothiadiazole and 6-aminobenzo-thiazole were studied as potential levelers for Cu plating in submicrometer trenches. We conducted galvanostatic measurements on rotating disk electrodes at various concentrations and recorded their respective voltages at 200 and 430 rpm. A profile of voltage difference between them at various concentrations revealed a volcano curve in which superfilling was expected to occur for 4-amino-2,1,3-benzothiadiazole but not for 6-aminobenzo-thiazole. Direct scanning electron microscopy observations on the plated Cu confirmed predictions from the volcano curves. A diffusion-adsorption mechanism was proposed for these two compounds to explain their leveling abilities on Cu superfilling. (C) 2009 The Electrochemical Society. [DOI: 10.1149/1.3265971] All rights reserved.en_US
dc.language.isoen_USen_US
dc.titleRapid Galvanostatic Determination on Levelers for Superfilling in Cu Electroplatingen_US
dc.typeArticleen_US
dc.identifier.doi10.1149/1.3265971en_US
dc.identifier.journalELECTROCHEMICAL AND SOLID STATE LETTERSen_US
dc.citation.volume13en_US
dc.citation.issue2en_US
dc.citation.spageD7en_US
dc.citation.epageD10en_US
dc.contributor.department材料科學與工程學系zh_TW
dc.contributor.departmentDepartment of Materials Science and Engineeringen_US
dc.identifier.wosnumberWOS:000272838700007-
dc.citation.woscount8-
Appears in Collections:Articles