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dc.contributor.authorFeng, Li-Weien_US
dc.contributor.authorChang, Chun-Yenen_US
dc.contributor.authorChang, Ting-Changen_US
dc.contributor.authorTu, Chun-Haoen_US
dc.contributor.authorWang, Pai-Syuanen_US
dc.contributor.authorChang, Yao-Fengen_US
dc.contributor.authorChen, Min-Chenen_US
dc.contributor.authorHuang, Hui-Chunen_US
dc.date.accessioned2014-12-08T15:08:03Z-
dc.date.available2014-12-08T15:08:03Z-
dc.date.issued2009-12-28en_US
dc.identifier.issn0003-6951en_US
dc.identifier.urihttp://dx.doi.org/10.1063/1.3279131en_US
dc.identifier.urihttp://hdl.handle.net/11536/6304-
dc.description.abstractWe investigated the physical and electrical characteristics of Ti-based nanocrystals (NCs) with composition of germanium fabricated by cosputtering titanium silicide and germanium targets for low temperature applications of nonvolatile memory. The addition of Ge significantly reduces the thermal budget necessary for Ti-based NCs formation to 500 degrees C in 2 min due to the rise of its morphological instability and agglomeration properties. Compositions characteristics were analyzed by x-ray photon-emission spectroscopy and formations of NCs were observed by transmission electron microscopy. Additionally, capacitance-voltage characteristics, data retention, and endurance properties are characterized to demonstrate its advantages for nonvolatile memory device applications.en_US
dc.language.isoen_USen_US
dc.subjectelemental semiconductorsen_US
dc.subjectgermaniumen_US
dc.subjectmaterials preparationen_US
dc.subjectnanostructured materialsen_US
dc.subjectrandom-access storageen_US
dc.subjectsputter depositionen_US
dc.subjecttitanium compoundsen_US
dc.subjecttransmission electron microscopyen_US
dc.subjectX-ray photoelectron spectraen_US
dc.titleRole of germanium in the reduced temperature dependence of Ti-based nanocrystals formation for nonvolatile memory applicationsen_US
dc.typeArticleen_US
dc.identifier.doi10.1063/1.3279131en_US
dc.identifier.journalAPPLIED PHYSICS LETTERSen_US
dc.citation.volume95en_US
dc.citation.issue26en_US
dc.citation.epageen_US
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.identifier.wosnumberWOS:000273216900033-
dc.citation.woscount5-
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