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dc.contributor.authorChao, Yu-Chiangen_US
dc.contributor.authorLai, Wei-Jenen_US
dc.contributor.authorChen, Chun-Yuen_US
dc.contributor.authorMeng, Hsin-Feien_US
dc.contributor.authorZan, Hsiao-Wenen_US
dc.contributor.authorHorng, Sheng-Fuen_US
dc.date.accessioned2014-12-08T15:08:03Z-
dc.date.available2014-12-08T15:08:03Z-
dc.date.issued2009-12-21en_US
dc.identifier.issn0003-6951en_US
dc.identifier.urihttp://dx.doi.org/10.1063/1.3266847en_US
dc.identifier.urihttp://hdl.handle.net/11536/6305-
dc.description.abstractLow voltage active pressure sensor is realized by vertically stacking a pressure sensitive rubber on a polymer space-charge-limited transistor. The sensor can be turned on and off by modulating the metal-grid base voltage within the range of 3 V. The output current is irrelevant to the pressure as the sensor is off. As the sensor is turned on, the output current values can be used to monitor the pressure. Reversible pressure sensing characteristics is observed below the pressure of 7.11 psi. The response time of the sensor to the pressure is as short as 22 ms. (C) 2009 American Institute of Physics. [doi:10.1063/1.3266847]en_US
dc.language.isoen_USen_US
dc.titleLow voltage active pressure sensor based on polymer space-charge-limited transistoren_US
dc.typeArticleen_US
dc.identifier.doi10.1063/1.3266847en_US
dc.identifier.journalAPPLIED PHYSICS LETTERSen_US
dc.citation.volume95en_US
dc.citation.issue25en_US
dc.citation.epageen_US
dc.contributor.department物理研究所zh_TW
dc.contributor.department光電工程學系zh_TW
dc.contributor.departmentInstitute of Physicsen_US
dc.contributor.departmentDepartment of Photonicsen_US
dc.identifier.wosnumberWOS:000273037700055-
dc.citation.woscount10-
Appears in Collections:Articles


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