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dc.contributor.authorSung, Chao-Fengen_US
dc.contributor.authorKekuda, Dhananjayen_US
dc.contributor.authorChu, Li Fenen_US
dc.contributor.authorLee, Yuh-Zhengen_US
dc.contributor.authorChen, Fang-Chungen_US
dc.contributor.authorWu, Meng-Chyien_US
dc.contributor.authorChu, Chih-Weien_US
dc.date.accessioned2014-12-08T15:08:03Z-
dc.date.available2014-12-08T15:08:03Z-
dc.date.issued2009-12-18en_US
dc.identifier.issn0935-9648en_US
dc.identifier.urihttp://dx.doi.org/10.1002/adma.200901215en_US
dc.identifier.urihttp://hdl.handle.net/11536/6308-
dc.description.abstractC60-based thin-film transistors are fabricated through solution processing. On rigid indium tin oxide (ITO) glass, the transistors display electron mobilities as high as 0.21 cm(2) V(-1) s(-1) and a threshold voltage of 0.7V, only slightly lower than those of organic thin-film transistors prepared through vacuum deposition. On ITO-coated PET substrates, the mobilities in the flexible devices (see image) are approximately one order of magnitude lower than those of devices prepared on rigid glass substrates.en_US
dc.language.isoen_USen_US
dc.titleFlexible Fullerene Field-Effect Transistors Fabricated Through Solution Processingen_US
dc.typeArticleen_US
dc.identifier.doi10.1002/adma.200901215en_US
dc.identifier.journalADVANCED MATERIALSen_US
dc.citation.volume21en_US
dc.citation.issue47en_US
dc.citation.spage4845en_US
dc.citation.epage+en_US
dc.contributor.department交大名義發表zh_TW
dc.contributor.departmentNational Chiao Tung Universityen_US
dc.identifier.wosnumberWOS:000273366200014-
dc.citation.woscount31-
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