矽和砷化鎵光偵測二極體製作與特性分析

Abstract

在本篇論文中，我們介紹使用在波長0.85微米之光偵測二極體的研製與特性分析，包括以矽和砷化鎵為材料。矽光偵測二極體是用磷擴散的方式，砷化鎵光偵測二極體則是以平臺式的結構來製作，特性分析是基於暗電流，量子效率，以及頻率響應的量測結果，對一直徑200微米，表面有抗反射鍍膜的矽光偵測二極體，在逆向偏壓5伏及室溫操作下，暗電流為623×10-12安培。在波長0.85微米的光入射時，響應度為0.542 A/W，量子效率為0.79而3dB截止頻率是100MHz。對一平臺直徑130微米，表面有抗反射鍍膜的砷化鎵光偵測二極體，在逆向偏壓5伏及室溫操作下，暗電流為237×10-12安培，在波長0.85微米的光入射時，響應度為0.494A/W，量子效率為0.72。而3dB截止頻率大於400MHz。

In this thesis, we present the fabrication of 0.85um Si and GaAs PIN photodiode. Planar Si PIN photodiode is fabricated by POCL3 diffusion on P-P+ epitaxial wafer. The mesa structure is used in the GaAs PIN photodiode with AlGaAs/GaAs heterojunction. Characteristics of the device including dark current, quantum efficiency, and frequency response are measured and discussed. For the Si PIN photodiode of φ=200 um with AR coating operated at 5V reverse bias and room temperature, the dark current is 623pA. At 0.85um, the photoresopnsivity is 0.542A/W and the corresponding quantum efficiency is 0.79. The 3dB cut-off frequency is 100MHz.For GaAs PIN photodiode of φMesa=130 um with AR coating operated at 5V reverse bias and room temperature, the dark current is 237pA. At 0.85um, the photoresopnsivity is 0.494 A/W and the corresponding quantum efficiency is 0.72. The 3dB cut -coff frequency is above 400MHz.