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dc.contributor.authorChin, Aen_US
dc.contributor.authorLiao, CCen_US
dc.contributor.authorTsai, Cen_US
dc.date.accessioned2014-12-08T15:01:53Z-
dc.date.available2014-12-08T15:01:53Z-
dc.date.issued1997-04-01en_US
dc.identifier.issn0741-3106en_US
dc.identifier.urihttp://dx.doi.org/10.1109/55.563314en_US
dc.identifier.urihttp://hdl.handle.net/11536/633-
dc.description.abstractThe dc and microwave performance of an InAs channel HEMT is reported. Room-temperature electron mobility as high as 20 200 cm(2)/Vs is measured, with a high carrier concentration of 2.7x10(12) cm(-2). DC extrinsic transconductance of 714 mS/mm is measured and a unity-current-gain cut-off frequency of 50 GHz is obtained for a 1.1-mu m gate length HEMT. The success of achieving superior Hall mobility and device performance is strongly dependent on the InxAl1-xAs buffer layer design that changes the lattice constant from lattice-matched In0.52Al0.48As to In0.75Al0.25As. The multiple In0.52Al0.48As/InAs monolayer superlattices buffer achieves the best performance as compared to the step-graded InxAl1-xAs and the uniform In0.75Al0.25As buffer.en_US
dc.language.isoen_USen_US
dc.titleIn0.52Al0.48As/InAs/InxAl1-xAs pseudomorphic HEMT's on InPen_US
dc.typeArticleen_US
dc.identifier.doi10.1109/55.563314en_US
dc.identifier.journalIEEE ELECTRON DEVICE LETTERSen_US
dc.citation.volume18en_US
dc.citation.issue4en_US
dc.citation.spage157en_US
dc.citation.epage159en_US
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.identifier.wosnumberWOS:A1997WN76400010-
dc.citation.woscount15-
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