In0.52Al0.48As/InAs/InxAl1-xAs pseudomorphic HEMT's on InP

doi:10.1109/55.563314

完整後設資料紀錄

DC 欄位	值	語言
dc.contributor.author	Chin, A	en_US
dc.contributor.author	Liao, CC	en_US
dc.contributor.author	Tsai, C	en_US
dc.date.accessioned	2014-12-08T15:01:53Z	-
dc.date.available	2014-12-08T15:01:53Z	-
dc.date.issued	1997-04-01	en_US
dc.identifier.issn	0741-3106	en_US
dc.identifier.uri	http://dx.doi.org/10.1109/55.563314	en_US
dc.identifier.uri	http://hdl.handle.net/11536/633	-
dc.description.abstract	The dc and microwave performance of an InAs channel HEMT is reported. Room-temperature electron mobility as high as 20 200 cm(2)/Vs is measured, with a high carrier concentration of 2.7x10(12) cm(-2). DC extrinsic transconductance of 714 mS/mm is measured and a unity-current-gain cut-off frequency of 50 GHz is obtained for a 1.1-mu m gate length HEMT. The success of achieving superior Hall mobility and device performance is strongly dependent on the InxAl1-xAs buffer layer design that changes the lattice constant from lattice-matched In0.52Al0.48As to In0.75Al0.25As. The multiple In0.52Al0.48As/InAs monolayer superlattices buffer achieves the best performance as compared to the step-graded InxAl1-xAs and the uniform In0.75Al0.25As buffer.	en_US
dc.language.iso	en_US	en_US
dc.title	In0.52Al0.48As/InAs/InxAl1-xAs pseudomorphic HEMT's on InP	en_US
dc.type	Article	en_US
dc.identifier.doi	10.1109/55.563314	en_US
dc.identifier.journal	IEEE ELECTRON DEVICE LETTERS	en_US
dc.citation.volume	18	en_US
dc.citation.issue	4	en_US
dc.citation.spage	157	en_US
dc.citation.epage	159	en_US
dc.contributor.department	電子工程學系及電子研究所	zh_TW
dc.contributor.department	Department of Electronics Engineering and Institute of Electronics	en_US
dc.identifier.wosnumber	WOS:A1997WN76400010	-
dc.citation.woscount	15	-
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