Improved Stress Reliability of Analog Metal-Insulator-Metal Capacitors Using TiO(2)/ZrO(2) Dielectrics

完整後設資料紀錄

DC 欄位	值	語言
dc.contributor.author	Lin, S. H.	en_US
dc.contributor.author	Chiang, K. C.	en_US
dc.contributor.author	Yeh, F. S.	en_US
dc.contributor.author	Chin, Albert	en_US
dc.date.accessioned	2014-12-08T15:08:08Z	-
dc.date.available	2014-12-08T15:08:08Z	-
dc.date.issued	2009-12-01	en_US
dc.identifier.issn	0741-3106	en_US
dc.identifier.uri	http://dx.doi.org/10.1109/LED.2009.2034113	en_US
dc.identifier.uri	http://hdl.handle.net/11536/6352	-
dc.description.abstract	We have studied the stress reliability of high-k Ni/TiO(2)/ZrO(2)/TiN metal-insulator-metal capacitors under constant-voltage stress. The increasing TiO(2) thickness on ZrO(2) improves the 125-degrees C leakage current, capacitance variation (Delta C/C), and long-term reliability. For a high density of 26 fF/mu m(2), good extrapolated ten-year reliability of small Delta C/C similar to 0.71% is obtained for the Ni/10-nm-TiO(2)/6-5-nm-ZrO(2)/TiN device at 2.5-V operation.	en_US
dc.language.iso	en_US	en_US
dc.title	Improved Stress Reliability of Analog Metal-Insulator-Metal Capacitors Using TiO(2)/ZrO(2) Dielectrics	en_US
dc.type	Article	en_US
dc.identifier.doi	10.1109/LED.2009.2034113	en_US
dc.identifier.journal	IEEE ELECTRON DEVICE LETTERS	en_US
dc.citation.volume	30	en_US
dc.citation.issue	12	en_US
dc.citation.spage	1287	en_US
dc.citation.epage	1289	en_US
dc.contributor.department	電子工程學系及電子研究所	zh_TW
dc.contributor.department	Department of Electronics Engineering and Institute of Electronics	en_US
顯示於類別：	期刊論文