High-Performance InGaZnO Thin-Film Transistors Using HfLaO Gate Dielectric

doi:10.1109/LED.2009.2033392

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DC Field	Value	Language
dc.contributor.author	Su, N. C.	en_US
dc.contributor.author	Wang, S. J.	en_US
dc.contributor.author	Chin, Albert	en_US
dc.date.accessioned	2014-12-08T15:08:08Z	-
dc.date.available	2014-12-08T15:08:08Z	-
dc.date.issued	2009-12-01	en_US
dc.identifier.issn	0741-3106	en_US
dc.identifier.uri	http://dx.doi.org/10.1109/LED.2009.2033392	en_US
dc.identifier.uri	http://hdl.handle.net/11536/6353	-
dc.description.abstract	In this letter, we report a low-voltage-driven amorphous indium-gallium-zinc oxide thin-film transistor with a high-k-value HfLaO gate dielectric. Good characteristics were achieved including a low V(T) of 0.22 V, small subthreshold swing of 76 mV/dec, high mobility of 25 cm(2)/V . s, and large I(on)/I(off) ratio of 5 x 10(7). These good performances are obtained at an operation voltage as low as 2 V. These characteristics are attractive for high-switching-speed and low-power applications.	en_US
dc.language.iso	en_US	en_US
dc.subject	Amorphous indium-gallium-zinc oxide (a-IGZO)	en_US
dc.subject	equivalent oxide thickness	en_US
dc.subject	HfLaO	en_US
dc.subject	high-k	en_US
dc.subject	thin-film transistors	en_US
dc.title	High-Performance InGaZnO Thin-Film Transistors Using HfLaO Gate Dielectric	en_US
dc.type	Article	en_US
dc.identifier.doi	10.1109/LED.2009.2033392	en_US
dc.identifier.journal	IEEE ELECTRON DEVICE LETTERS	en_US
dc.citation.volume	30	en_US
dc.citation.issue	12	en_US
dc.citation.spage	1317	en_US
dc.citation.epage	1319	en_US
dc.contributor.department	電子工程學系及電子研究所	zh_TW
dc.contributor.department	Department of Electronics Engineering and Institute of Electronics	en_US
dc.identifier.wosnumber	WOS:000272044500023	-
dc.citation.woscount	32	-
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