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dc.contributor.author許增鉅en_US
dc.contributor.authorXu, Zeng-Juen_US
dc.contributor.author林登松en_US
dc.contributor.authorLin, Deng-Songen_US
dc.date.accessioned2014-12-12T02:19:45Z-
dc.date.available2014-12-12T02:19:45Z-
dc.date.issued1997en_US
dc.identifier.urihttp://140.113.39.130/cdrfb3/record/nctu/#NT864198001en_US
dc.identifier.urihttp://hdl.handle.net/11536/63619-
dc.description.abstractPhosphine is a molecule widely used in chemical vapor deposition (CVD)procession for n0type doping of silicon. So it is important to understand growth kinetics. The interaction of phosphine with the Si(100) surface in CVD processes has been investigated with core-level photoemission spectroscopy.the adsorption and thermal decomposition of phosphine depends strongly onsubstrate temperature. When a surface saturated with phosphine is annealedto the low annealing temperature regime(300-620K), the thermal dissociation fragments are attributed primarily to PH2 + H. At higher annealing annealingtemperature(650-720K), the surface contains Si-P heterodimers,PH2 and H. Athigh annealing temperature (>770K), the surface hydrogen desorb completely here, the surface P atoms from P-P dimer. At 300K, phosphine is found to adsorb bothdissociativitely and nondissociatively, depending on the phosphine flux and phosphorus coverage. during exposure.At maximun phosphorus coverage, pbtained by adsorption at 850K,P-P dimers are found.zh_TW
dc.language.isozh_TWen_US
dc.subject化學氣相沉積磊相法zh_TW
dc.subject熱反應zh_TW
dc.subject核心層zh_TW
dc.subject光電子激發術zh_TW
dc.subject化學氣相沉積磊晶法zh_TW
dc.subject矽表面zh_TW
dc.subject磷薄膜zh_TW
dc.subject同步輻射zh_TW
dc.subject物理zh_TW
dc.subjectPH3en_US
dc.subjectPH2en_US
dc.subjectChemical vapor depositionen_US
dc.subjectcore levelen_US
dc.subjectphotoemissionen_US
dc.subjectchemical vapor depositionen_US
dc.subjectSi(100) surfaceen_US
dc.subjectphosphorusen_US
dc.subjectsyrchrotron radiationen_US
dc.subjectPHYSICSen_US
dc.title核心層光電子激發術對化學氣相沉積磊晶法在Si(100)表面上成長磷薄膜現象的研究zh_TW
dc.titleCore-level photoemission study of phosphorus growth on Si(100) by chemical vapor deposition from phosphineen_US
dc.typeThesisen_US
dc.contributor.department物理研究所zh_TW
Appears in Collections:Thesis