核心層光電子激發術對化學氣相沉積磊晶法在Si(100)表面上成長磷薄膜現象的研究

Abstract

Phosphine is a molecule widely used in chemical vapor deposition (CVD)procession for n0type doping of silicon. So it is important to understand growth kinetics. The interaction of phosphine with the Si(100) surface in CVD processes has been investigated with core-level photoemission spectroscopy.the adsorption and thermal decomposition of phosphine depends strongly onsubstrate temperature. When a surface saturated with phosphine is annealedto the low annealing temperature regime(300-620K), the thermal dissociation fragments are attributed primarily to PH2 + H. At higher annealing annealingtemperature(650-720K), the surface contains Si-P heterodimers,PH2 and H. Athigh annealing temperature (>770K), the surface hydrogen desorb completely here, the surface P atoms from P-P dimer. At 300K, phosphine is found to adsorb bothdissociativitely and nondissociatively, depending on the phosphine flux and phosphorus coverage. during exposure.At maximun phosphorus coverage, pbtained by adsorption at 850K,P-P dimers are found.