利用陶瓷封裝電晶體設計20GHz介質振盪器之研究

完整後設資料紀錄

DC 欄位	值	語言
dc.contributor.author	許政雄	en_US
dc.contributor.author	Xu, Zheng-Xiong	en_US
dc.contributor.author	高曜煌	en_US
dc.contributor.author	Gao, Yue-Huang	en_US
dc.date.accessioned	2014-12-12T02:19:46Z	-
dc.date.available	2014-12-12T02:19:46Z	-
dc.date.issued	1997	en_US
dc.identifier.uri	http://140.113.39.130/cdrfb3/record/nctu/#NT864435002	en_US
dc.identifier.uri	http://hdl.handle.net/11536/63641	-
dc.description.abstract	At high frequency, oscillator is normally designed from [S] parameters because of complicated parasitic. While the basic origins of existing negative resistance can not be easily figured out. In this study, the negative resistance of six configurations are examined by appropriate model of HEMT. The frequency ranges of existing negative resistance are predicted. The results are applied to a 20GHz DRO as well as a YIG oscillator. 20GHz DRO is realized directly by the packaged active device and 20GHz DR from the view point of low cost fabrication. The DRO with reasonable performances of output power of -18 dBm and -70dBc/Hz phase noise at 100KHz offset is obtained.	zh_TW
dc.language.iso	zh_TW	en_US
dc.subject	介質振盪器	zh_TW
dc.subject	陶瓷封裝	zh_TW
dc.subject	負阻抗	zh_TW
dc.subject	電晶體	zh_TW
dc.subject	20GHz 介質振盪器	zh_TW
dc.subject	YIG 振盪器	zh_TW
dc.subject	電信	zh_TW
dc.subject	電子工程	zh_TW
dc.subject	DRO	en_US
dc.subject	package	en_US
dc.subject	Negative resistance	en_US
dc.subject	HEMT	en_US
dc.subject	20GHz DRO	en_US
dc.subject	YIG oscillator	en_US
dc.subject	TELECOMMUNICATION	en_US
dc.subject	ELECTRONIC-ENGINEERING	en_US
dc.title	利用陶瓷封裝電晶體設計20GHz介質振盪器之研究	zh_TW
dc.title	20GHz DRO Design usign Package Components	en_US
dc.type	Thesis	en_US
dc.contributor.department	電信工程研究所	zh_TW
顯示於類別：	畢業論文