| 標題: | 雙本質層非晶矽薄膜電晶體之研究 Study on the dual-intrinsic-layer hydrogenated amorphous silicon thin film transistors |
| 作者: | 蔡俊偉 鄭晃忠 電子研究所 |
| 公開日期: | 1997 |
| URI: | http://140.113.39.130/cdrfb3/record/nctu/#NT866430100 http://hdl.handle.net/11536/63678 |
| Appears in Collections: | Thesis |
- 非晶矽薄膜電晶體特性及可靠度之研究 / 戴亞翔;Tai ,Ya-Hsiang;鄭晃忠;Huang-Chung Cheng
- The electrical characteristics of the amorphous silicon thin film transistors with dual intrinsic layers / Tsai, JW;Cheng, HC;Chou, A;Su, FC;Luo, FC
- 低氫含量之氧化矽介電層薄膜應用於銦鎵鋅金屬氧化物半導體元件之研究 / 張民杰;Chang, Ming-Chieh;鄭泗東;Cheng, Stone
- A novel thin-film transistor with vertical offset structure / Lin, CW;Chang, CY
- 非晶矽與微晶矽薄膜電晶體製程及其特性之研究 / 梁佳文;Liang,Chia Wen;馮明憲;Ming-Shiann Feng
- 利用不同材料與結構提升單接面非晶矽薄膜太陽能電池效率之研究 / 林怡萍;Lin, Yi-Ping;蔡娟娟;Tsai, Chuang-Chuang
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