雙本質層非晶矽薄膜電晶體之研究

完整後設資料紀錄

DC 欄位	值	語言
dc.contributor.author	蔡俊偉	en_US
dc.contributor.author	鄭晃忠	en_US
dc.date.accessioned	2014-12-12T02:19:49Z	-
dc.date.available	2014-12-12T02:19:49Z	-
dc.date.issued	1997	en_US
dc.identifier.uri	http://140.113.39.130/cdrfb3/record/nctu/#NT866430100	en_US
dc.identifier.uri	http://hdl.handle.net/11536/63678	-
dc.language.iso	zh_TW	en_US
dc.title	雙本質層非晶矽薄膜電晶體之研究	zh_TW
dc.title	Study on the dual-intrinsic-layer hydrogenated amorphous silicon thin film transistors	en_US
dc.type	Thesis	en_US
dc.contributor.department	電子研究所	zh_TW
顯示於類別：	畢業論文