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dc.contributor.authorTsai, Wu-Weien_US
dc.contributor.authorChao, Yu-Chiangen_US
dc.contributor.authorChen, En-Chenen_US
dc.contributor.authorZan, Hsiao-Wenen_US
dc.contributor.authorMeng, Hsin-Feien_US
dc.contributor.authorHsu, Chain-Shuen_US
dc.date.accessioned2014-12-08T15:08:14Z-
dc.date.available2014-12-08T15:08:14Z-
dc.date.issued2009-11-23en_US
dc.identifier.issn0003-6951en_US
dc.identifier.urihttp://dx.doi.org/10.1063/1.3263144en_US
dc.identifier.urihttp://hdl.handle.net/11536/6415-
dc.description.abstractThe direct influence of the vertical carrier mobility on the frequency response of bilayered organic photodiodes (PDs) is investigated for the first time. With fullerene as the acceptor material, changing vertical hole mobility from 2.3x10(-5) to 2.8x10(-4) cm(2)/V s increases PD bandwidth from 10 to 80 MHz under a 4 V operation. The influence of deposition rate on vertical hole mobility of pentacene film is also discussed. Our results facilitate the application of bilayered organic PDs on the detection of very-high-frequency optical signals.en_US
dc.language.isoen_USen_US
dc.subjecthole mobilityen_US
dc.subjectorganic semiconductorsen_US
dc.subjectphotodetectorsen_US
dc.subjectphotodiodesen_US
dc.subjectsemiconductor thin filmsen_US
dc.titleIncreasing organic vertical carrier mobility for the application of high speed bilayered organic photodetectoren_US
dc.typeArticleen_US
dc.identifier.doi10.1063/1.3263144en_US
dc.identifier.journalAPPLIED PHYSICS LETTERSen_US
dc.citation.volume95en_US
dc.citation.issue21en_US
dc.citation.epageen_US
dc.contributor.department應用化學系zh_TW
dc.contributor.department物理研究所zh_TW
dc.contributor.department光電工程學系zh_TW
dc.contributor.departmentDepartment of Applied Chemistryen_US
dc.contributor.departmentInstitute of Physicsen_US
dc.contributor.departmentDepartment of Photonicsen_US
dc.identifier.wosnumberWOS:000272895100044-
dc.citation.woscount11-
Appears in Collections:Articles


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