標題: Increasing organic vertical carrier mobility for the application of high speed bilayered organic photodetector
作者: Tsai, Wu-Wei
Chao, Yu-Chiang
Chen, En-Chen
Zan, Hsiao-Wen
Meng, Hsin-Fei
Hsu, Chain-Shu
應用化學系
物理研究所
光電工程學系
Department of Applied Chemistry
Institute of Physics
Department of Photonics
關鍵字: hole mobility;organic semiconductors;photodetectors;photodiodes;semiconductor thin films
公開日期: 23-十一月-2009
摘要: The direct influence of the vertical carrier mobility on the frequency response of bilayered organic photodiodes (PDs) is investigated for the first time. With fullerene as the acceptor material, changing vertical hole mobility from 2.3x10(-5) to 2.8x10(-4) cm(2)/V s increases PD bandwidth from 10 to 80 MHz under a 4 V operation. The influence of deposition rate on vertical hole mobility of pentacene film is also discussed. Our results facilitate the application of bilayered organic PDs on the detection of very-high-frequency optical signals.
URI: http://dx.doi.org/10.1063/1.3263144
http://hdl.handle.net/11536/6415
ISSN: 0003-6951
DOI: 10.1063/1.3263144
期刊: APPLIED PHYSICS LETTERS
Volume: 95
Issue: 21
結束頁: 
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