標題: A Strain-Driven Morphotropic Phase Boundary in BiFeO(3)
作者: Zeches, R. J.
Rossell, M. D.
Zhang, J. X.
Hatt, A. J.
He, Q.
Yang, C. -H.
Kumar, A.
Wang, C. H.
Melville, A.
Adamo, C.
Sheng, G.
Chu, Y. -H.
Ihlefeld, J. F.
Erni, R.
Ederer, C.
Gopalan, V.
Chen, L. Q.
Schlom, D. G.
Spaldin, N. A.
Martin, L. W.
Ramesh, R.
材料科學與工程學系
Department of Materials Science and Engineering
公開日期: 13-Nov-2009
摘要: Piezoelectric materials, which convert mechanical to electrical energy and vice versa, are typically characterized by the intimate coexistence of two phases across a morphotropic phase boundary. Electrically switching one to the other yields large electromechanical coupling coefficients. Driven by global environmental concerns, there is currently a strong push to discover practical lead-free piezoelectrics for device engineering. Using a combination of epitaxial growth techniques in conjunction with theoretical approaches, we show the formation of a morphotropic phase boundary through epitaxial constraint in lead-free piezoelectric bismuth ferrite (BiFeO(3)) films. Electric field-dependent studies show that a tetragonal-like phase can be reversibly converted into a rhombohedral-like phase, accompanied by measurable displacements of the surface, making this new lead-free system of interest for probe-based data storage and actuator applications.
URI: http://dx.doi.org/10.1126/science.1177046
http://hdl.handle.net/11536/6430
ISSN: 0036-8075
DOI: 10.1126/science.1177046
期刊: SCIENCE
Volume: 326
Issue: 5955
起始頁: 977
結束頁: 980
Appears in Collections:Articles