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dc.contributor.author李育儒en_US
dc.contributor.authorYu-Ru Lien_US
dc.contributor.author徐 瑞 坤en_US
dc.contributor.author歐 耿 良en_US
dc.contributor.authorDr. Ray-Quen Hsuen_US
dc.contributor.authorDr. Keng-Liang Ouen_US
dc.date.accessioned2014-12-12T02:20:46Z-
dc.date.available2014-12-12T02:20:46Z-
dc.date.issued2004en_US
dc.identifier.urihttp://140.113.39.130/cdrfb3/record/nctu/#GT009169506en_US
dc.identifier.urihttp://hdl.handle.net/11536/64335-
dc.description.abstract本論文以Ti-Al的靶材通入不同的氮流量進行Ti-Al-N薄膜的沉積。待沉積完後的Ti-Al-N薄膜再以物理氣相沉積的方式沉積Cu於Ti-Al-N薄膜上形成Cu/Ti-Al-N/Si結構。完成Cu/Ti-Al-N/Si結構後分別進行不同溫度的退火,以進行熱穩定性的探討。zh_TW
dc.description.abstractThis article presents the deposition of Ti-Al by reactive RF-magnetron sputtering on silicon substrate in various nitrogen flow rate, and carries out a ternary barrier film, Ti-Al-N, with different characteristics. Copper films are subsequently deposited onto Ti-Al-N by PVD without a vacuum break. After that, the samples were treated under various temperatures annealing to investigate Cu/Ti-Al-N/Si stack films and observe the thermal stability.en_US
dc.language.isozh_TWen_US
dc.subject銅導線zh_TW
dc.subject擴散阻障層zh_TW
dc.subject氮化鋁鈦zh_TW
dc.subject熱穩定性zh_TW
dc.subjectCuen_US
dc.subjectTi-Al-Nen_US
dc.subjectbarrier layeren_US
dc.subjectthermal stabilityen_US
dc.title氮化鋁鈦擴散阻障層在銅金屬化製程中熱穩定性及特性之研究zh_TW
dc.titleThermal Stability and Properties of Ti-Al-N Diffusion Barrier Layer for Copper Interconnectionsen_US
dc.typeThesisen_US
dc.contributor.department工學院精密與自動化工程學程zh_TW
Appears in Collections:Thesis


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