氮化鋁鈦擴散阻障層在銅金屬化製程中熱穩定性及特性之研究

完整後設資料紀錄

DC 欄位	值	語言
dc.contributor.author	李育儒	en_US
dc.contributor.author	Yu-Ru Li	en_US
dc.contributor.author	徐瑞坤	en_US
dc.contributor.author	歐耿良	en_US
dc.contributor.author	Dr. Ray-Quen Hsu	en_US
dc.contributor.author	Dr. Keng-Liang Ou	en_US
dc.date.accessioned	2014-12-12T02:20:46Z	-
dc.date.available	2014-12-12T02:20:46Z	-
dc.date.issued	2004	en_US
dc.identifier.uri	http://140.113.39.130/cdrfb3/record/nctu/#GT009169506	en_US
dc.identifier.uri	http://hdl.handle.net/11536/64335	-
dc.description.abstract	本論文以Ti-Al的靶材通入不同的氮流量進行Ti-Al-N薄膜的沉積。待沉積完後的Ti-Al-N薄膜再以物理氣相沉積的方式沉積Cu於Ti-Al-N薄膜上形成Cu/Ti-Al-N/Si結構。完成Cu/Ti-Al-N/Si結構後分別進行不同溫度的退火，以進行熱穩定性的探討。	zh_TW
dc.description.abstract	This article presents the deposition of Ti-Al by reactive RF-magnetron sputtering on silicon substrate in various nitrogen flow rate, and carries out a ternary barrier film, Ti-Al-N, with different characteristics. Copper films are subsequently deposited onto Ti-Al-N by PVD without a vacuum break. After that, the samples were treated under various temperatures annealing to investigate Cu/Ti-Al-N/Si stack films and observe the thermal stability.	en_US
dc.language.iso	zh_TW	en_US
dc.subject	銅導線	zh_TW
dc.subject	擴散阻障層	zh_TW
dc.subject	氮化鋁鈦	zh_TW
dc.subject	熱穩定性	zh_TW
dc.subject	Cu	en_US
dc.subject	Ti-Al-N	en_US
dc.subject	barrier layer	en_US
dc.subject	thermal stability	en_US
dc.title	氮化鋁鈦擴散阻障層在銅金屬化製程中熱穩定性及特性之研究	zh_TW
dc.title	Thermal Stability and Properties of Ti-Al-N Diffusion Barrier Layer for Copper Interconnections	en_US
dc.type	Thesis	en_US
dc.contributor.department	工學院精密與自動化工程學程	zh_TW
顯示於類別：	畢業論文

文件中的檔案：

950601.pdf

若為 zip 檔案，請下載檔案解壓縮後，用瀏覽器開啟資料夾中的 index.html 瀏覽全文。