X光相移光罩之研究

Abstract

本論文研究主旨在探討x光相移光罩之製作技術。本光罩之製作，利用多矽氮化矽為鼓膜，再沈積一層相移層，此相移層的材料為鋁、錳、和鎢化合物。本研究詳細探討模擬和相移現象的基本理論。多矽氮化矽是以低壓化學氣相沈積法在不同的溫度下，通入混合氣體NH3和SiH2Cl2沈積而成。利用PECVD沈積二氧化矽來改善氮化矽膜在波長633nm時的透光度。而HENKE模擬工具，用來模擬相移層的透光率、吸收率和反射率，並且可以模擬出相差180。時，相移層的厚度。濕蝕刻和剝蝕法的結果並加以比較討論。

In this study, we investigated the fabrication of the x-ray phase shifting masks which used the silicon rich nitride as membranes and Al, Mo, and W compound as shifters. The simulation and basic theory are discussed in this article. The silicon rich nitride film was deposited by the LPCVD system with mixed gas sources of NH3 and SiH2Cl2 at different temperatures. The PECVD-SiO2 was deposited on the nitride film that improved the optical transmittance at the 633nm. The HENKE simulation tool was used to simulate the shifter layer transmittance, absorption rate, and reflectance at different x-ray energy. This tool also could simulate the Al, Mo, and W thickness of the p shifting. The comparison of the wet etching and lift off processes are also discussed.