低相位雜訊Ka頻段振盪器

Abstract

本論文利用微波混成積體電路（Hybrid MIC）的方式來設計Ka頻段振盪器，之中必須克服元件高頻增益不足、寄生效應的問題。此外在此頻段亦不容易得到高Q值的諧振腔，所以設計上使用由FET閘極為輸出的電路組態，而諧振腔是使用共平面波導的串聯開路支線。其電路量測結果如下：最大輸出功率為11dBm，而相位雜訊在離主訊號100KHz處最佳為-95dbc/Hz。此結果要比文獻上採用MMIC製程及使用介質諧振腔(DR)所製作的振盪器有更好的性能

In this thesis, we use Hybrid MIC technology to design oscillators working at Ka-band. We have to overcome the problem of the limited high frequency gain of the HEMT device and circuits parasitic effects. And moreover, it is difficult to achieve a high Q resonator at this frequency band. Therefore, a new circuit structure is proposed, in which the output signal takes from the gete of FET and the oscillating tank comprises of a CPW open circuit series stub. The measured results show that the maxmuin oscillator output power is 11dBm and the best phase noise at 100KHz offset is -95dBc/Hz. The performances mentioned above are better than that of MMIC oscillators and even DR (Dielectric Resonator) oscillators published in the literature.