標題: 單平面式Ka頻段倍頻器
Uniplanar type Ka-band frequency doubler
作者: 陳明生
Chain Ming Shien
張志揚
Chi-Yang Chang
電信工程研究所
關鍵字: 倍頻器;單平面式;二極體倍頻電路;電晶體倍頻電路;單一倍頻電路;平衡式倍頻電路;doubler;multiplier;diode doubler;FET doubler;uniplanar;single balanced;single-ended
公開日期: 1998
摘要: 本論文提出一種以單平面式Ka頻段倍頻器之方法,依非線性元件分為兩種類型電路,分別為二極體倍頻電路及FET倍頻電路。二極體倍頻電路依二極體的擺設製作了三種電路,依次為單平衡式同向二極體、反向二極體及寬頻反向二極體倍頻電路,同向、反向及寬頻反向二極體倍頻電路其輸出倍頻最大功率約為6~7dBm,轉頻耗損同向二極體之輸出從20~30GHz大約介於11~13dB之間,反向二極體之輸出從12~30GHz大約介於11~13dB之間,而寬頻反向二極體其轉頻耗損輸出從20~40GHz大約介於11~13dB之間,三種二極體倍頻電路其輸出端基頻功率壓制至少20dB以上,在輸出頻率20~50GHz之間。FET倍頻電路製作了二種電路型式,分為單一FET及單平衡式FET倍頻電路,單一FET及平衡式FET倍頻電路其最大倍頻輸出功率,大約分別為6~7dBm及8~9dBm。因為FET為主動元件所以製作的倍頻電路其轉頻耗損較小甚至有轉頻增益,單一FET倍頻電路之最大轉頻增益約為7~8dB,而平衡式FET倍頻電路最小之轉頻耗損約為0~1dB之間,而兩種電路在輸出頻率34~46GHz之間輸出端基頻功率壓制介於25~30dB之間。
Abstract In thesis, we propose a design to realize uniplanar Ka-band frequency doublers. Two kinds of frequency doubler circuits are developed, namely diode doublers and FET doublers. According to diode configuration three types of diode doubler are developed, which are single balanced cps type with diodes in same direction, cps type with diodes in opposite direction and broadband rat race type with diodes in opposite direction. The three diode doublers all show maximum output second harmonic power of 6~7dBm. The C.L (conversion loss) of the cps type diode doubler with diodes in same direction is about 11~13dB with output frequency from 20GHz to 30GHz. The C.L of the cps type diode doubler with diodes in opposite direction is about 11~13dB with output frequency from 12GHz to 30GHz. The C.L of the broadband rat race type diode doubler with diodes in opposite direction is about 11~13dB with output frequency from 20GHz to 40GHz. The input fundamental power of all three diode doublers is suppressed more than 20dB at the output port from 20GHz to 50GHz. We also design two type FET doublers, namly single-ended FET doubler and single balanced FET doubler. The maximum output second harmonic power of single-ended and single balanced FET doublers are 6~7dBm and 8~9dBm, respectively. Because FET is an active device, the FET doubler shows much smaller C.L than that of diode doubler, or even shows C.G (conversion gain) in some specific input power level. The maximal C.G of the single-ended FET doubler is about 7~8dB and the minimal C.L of the single balanced FET doubler is about 0~1dB. The two FET doublers show more than 25~30dB the input power suppression at output port with output frequency from 34GHz to 46GHz.
URI: http://140.113.39.130/cdrfb3/record/nctu/#NT870435071
http://hdl.handle.net/11536/64530
顯示於類別:畢業論文