低微波頻段寬頻電壓控制振盪器

Abstract

摘 要 在這篇論文提出以封裝與未封裝的可變電容二極體設計低微波頻段寬頻電壓控制振盪器的方法。利用簡化的FET模型來分析不同振盪器組態的特性，最後利用分析的結果可以輕易的設計出約有兩倍頻寬而且最高頻率可達5.1GHz的電壓控制振盪器。同時，使用雙調節的組態與未封裝的可變電容二極體成功的做出3.3GHz到7.8GHz超過兩倍頻寬的電壓控制振盪器。

Abstracts Design procedures of wide band voltage controlled oscillator (VCO) using packaged and unpackaged varactors are presented for low microwave band. The inherent features of various configurations are analyzed by simplified model of FET as well, so that a design procedure is figured out. A nearly octave VCO up to 5.1GHz using single packaged varactor is presented. Furthermore, the double-tuned VCO using unpackaged varactor with a bandwidth from 3.3GHz to 7.8 GHz is successfully fabricated.