標題: Improved Electrical Performance and Uniformity of MILC Poly-Si TFTs Manufactured Using Drive-In Nickel-Induced Lateral Crystallization
作者: Chang, Chih-Pang
Wu, YewChung Sermon
材料科學與工程學系
Department of Materials Science and Engineering
關鍵字: Drive-in nickel-induced lateral crystallization (DILC);fluorine ion (F(+)) implantation;thin-film transistors (TFTs);uniformity
公開日期: 1-Nov-2009
摘要: A new manufacturing method for polycrystalline silicon (poly-Si) thin-film transistors (TFTs) using drive-in nickel-induced lateral crystallization (DILC) was proposed. In DILC, a F(+) implantation was used to drive Ni in the alpha-Si layer. To reduce Ni contamination, the remained Ni film was then removed and subsequently annealed at 590 degrees C. It was found that DILC TFTs exhibit high field-effect mobility, low threshold voltage, low subthreshold slope, high ON-state current, lower trap-state density, smaller standard deviations, and low OFF-state leakage current compared with conventional Ni-metal-induced lateral crystallization TFTs.
URI: http://dx.doi.org/10.1109/LED.2009.2031130
http://hdl.handle.net/11536/6493
ISSN: 0741-3106
DOI: 10.1109/LED.2009.2031130
期刊: IEEE ELECTRON DEVICE LETTERS
Volume: 30
Issue: 11
起始頁: 1176
結束頁: 1178
Appears in Collections:Articles


Files in This Item:

  1. 000271151500020.pdf

If it is a zip file, please download the file and unzip it, then open index.html in a browser to view the full text content.