Program Trapped-Charge Effect on Random Telegraph-Noise Amplitude in a Planar SONOS Flash Memory Cell

標題:	Program Trapped-Charge Effect on Random Telegraph-Noise Amplitude in a Planar SONOS Flash Memory Cell
作者:	Ma, H. C. Chou, Y. L. Chiu, J. P. Wang, Tahui Ku, S. H. Zou, N. K. Chen, Vincent Lu, W. P. Chen, K. C. Lu, Chih-Yuan 電子工程學系及電子研究所 Department of Electronics Engineering and Institute of Electronics
關鍵字:	Percolation;program charge;random telegraph noise (RTN);SONOS
公開日期:	1-十一月-2009
摘要:	Program-charge effects in a SONOS Flash cell on the amplitude of random telegraph noise (RTN) are investigated. We measure RTN in 45 planar SONOS cells and 40 floating-gate (FG) cells in erase state and program state, respectively. We find that a SONOS cell has a wide spread in RTN amplitudes after programming, while an FG cell has identical RTN amplitudes in erase and program states at the same read-current level. A 3-D atomistic simulation is performed to calculate RTN amplitudes. Our result shows that the wide spread of program-state RTN amplitudes in a SONOS cell is attributed to a current-path-percolation effect caused by random discrete nitride charges.
URI:	http://dx.doi.org/10.1109/LED.2009.2030589 http://hdl.handle.net/11536/6495
ISSN:	0741-3106
DOI:	10.1109/LED.2009.2030589
期刊:	IEEE ELECTRON DEVICE LETTERS
Volume:	30
Issue:	11
起始頁:	1188
結束頁:	1190
顯示於類別：	期刊論文

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