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dc.contributor.authorLiu, Yu-Shenen_US
dc.contributor.authorChen, Yi-Renen_US
dc.contributor.authorChen, Yu-Changen_US
dc.date.accessioned2014-12-08T15:08:23Z-
dc.date.available2014-12-08T15:08:23Z-
dc.date.issued2009-11-01en_US
dc.identifier.issn1936-0851en_US
dc.identifier.urihttp://dx.doi.org/10.1021/nn900986ren_US
dc.identifier.urihttp://hdl.handle.net/11536/6496-
dc.description.abstractUsing first-principles approaches, we investigate the thermoelectric efficiency, characterized by the figure of merit ZT, in metallic atomic junctions and insulating molecular junctions. To gain insight into the properties of ZT, an analytical theory is also developed to study the dependence of ZT on lengths (l) and temperatures (T). The theory considers the combined heat current carried by electrons and phonons. We observe a characteristic temperature: T(0) = (beta/gamma(l))(1/2). When T << T(0), the electronic heat current dominates the combined heat current and ZT proportional to T(2). When T >> T(0), the phononic heat current dominates the combined heat current and ZT tends to a saturation value. Moreover, the metallic atomic junctions and the insulating molecular junctions have opposite trend for the dependence of ZT on lengths, that is, ZT increases as the length increases for aluminum atomic junctions, while ZT decreases as the length increases for alkanethiol molecular junctions.en_US
dc.language.isoen_USen_US
dc.subjectthermoelectricityen_US
dc.subjectSeebeck coefficienten_US
dc.subjectthermoelectric figure of meriten_US
dc.subjectelectronic heat conductanceen_US
dc.subjectphononic heat conductanceen_US
dc.subjectatomic junctionen_US
dc.subjectsingle-molecule junctionen_US
dc.subjectdensity functional theoryen_US
dc.titleThermoelectric Efficiency in Nanojunctions: A Comparison between Atomic Junctions and Molecular Junctionsen_US
dc.typeArticleen_US
dc.identifier.doi10.1021/nn900986ren_US
dc.identifier.journalACS NANOen_US
dc.citation.volume3en_US
dc.citation.issue11en_US
dc.citation.spage3497en_US
dc.citation.epage3504en_US
dc.contributor.department電子物理學系zh_TW
dc.contributor.departmentDepartment of Electrophysicsen_US
dc.identifier.wosnumberWOS:000271951200023-
dc.citation.woscount44-
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