標題: 添加鋯對鈦酸鍶鋇薄膜的微結構與介電特性的影響
Effect of Zicronia on Microstructure and Dielectric Properties of Barium Strontium Titanate Thin Film
作者: 楊雅惠
Yang Ya-hui
林健正
Chien-Cheng Lin
材料科學與工程學系
關鍵字: 鈦酸鍶鈦 添加鋯;Dopeing Zr ,BST
公開日期: 1999
摘要: 本研究嘗試以溶膠-凝膠方法在Pt/Ta/SiO2/Si(100)基板上製備(Ba0.7Sr0.3)(ZrxTi1-x)O3薄膜,並在400℃~850℃之間進行熱處理,以XRD鑑定結晶相,以SEM、TEM觀察薄膜的微觀結構,並量測漏電流密度、介電數值和計算單位體積可儲存之電容。鋯的含量x = 0、0.05、0.1、0.15、0.2,當x = 0時,(Ba0.7Sr0.3)TiO3的成相溫度在550℃左右開始形成,並在500℃ ~ 650℃之間鑑別出結晶的 (Ba,Sr)CO3中間過渡相;添加高熔點的鋯元素之後,(Ba0.7Sr0.3)(ZrxTi1-x)O3的成相溫度約在650℃左右,500℃ ~ 700℃鑑別出(Ba,Sr)O2的中間過渡相。由SEM微結構觀察得之, Zr有抑制晶粒成長的效果,此亦為介電常數會增加的原因。經由電性量測的結果得知,當x = 0.1時,熱處理溫度為800℃二小時,可得最佳電性,介電常數為450,漏電流密度為10-8A/cm2。
(Ba0.7Sr0.3)(ZrxTi1-x)O3 [x = 0、0.05、0.1、0.15、0.2] thin films were deposited on Pt/Ta/SiO2/Si(100) substrate by Sol-Gel and spin coating methods and then annealed at temperature ranging from 400℃ to 850℃ . The crystallization behavior and micro structural evolution of the films were investigated by XRD, SEM, and TEM . All thin films crystallized to perovskite at 550℃. The (Ba0.7Sr0.3)TiO3 films crystallized to an intermediate phase (Ba,Sr)CO3 between 500℃~ 600℃ and crystallized to cubic (Ba0.7Sr0.3)TiO3 phase above 650℃. Zicronia addition to (Ba0.7Sr0.3)TiO3 , an intermediate phase is (Ba,Sr)O between 500℃~ 700℃. Zicronia can controlling grain growth is attributed to a decrease in grain boundary mobility due to solute drag. The Specimen with a composition of x = 0.1 had optimum electric properties. A dielectric constant of 459 and leakage current density of 10-8 A/cm2 were measured for the (Ba0.7Sr0.3)TiO3 films after annealing at 800℃ for 2hours.
URI: http://140.113.39.130/cdrfb3/record/nctu/#NT880159032
http://hdl.handle.net/11536/65307
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