標題: | 以介電層摻雜提升相變化光碟可覆寫次數之研究 Enhancement of Cycleability Using the Method of Doping |
作者: | 余建輝 Yu,Chien-Hui 謝宗雍 T.E. Hsieh 材料科學與工程學系 |
關鍵字: | 相變化;DVD-RAM |
公開日期: | 1999 |
摘要: | 數位多功能光碟(digital versatile disks, DVDs)為下一世紀的光紀錄媒體的主流,而可重覆讀寫的DVD-RAM相變化光碟預計將成為主要的紀錄媒體。高覆寫次數是相變化光碟必備的特性,本實驗探討以摻雜(doping)的技術提升碟片覆寫次數的方法。我們在碟片的介電層中摻雜鉻、鉬、鎳、鉭、鈦、鎢或釩等元素,亦在介電層濺鍍的過程中導入氮,以改變介電層的性質,藉以提升可覆寫次數。 Rewritable DVD-RAM phase-change optical disk is expected to be the main stream of storage device for multi-media applications. The DVD-RAM disks must posses high overwriting capability. In our experiment, enhancement of disk cycleability was studied by using the method of doping in the dielectric layer of optical disks. The doping elements included chromium (Cr), molybdenum (Mo), nickel (Ni), tantalum (Ta), titanium (Ti), tungsten (W) and vanadium (V). |
URI: | http://140.113.39.130/cdrfb3/record/nctu/#NT880159034 http://hdl.handle.net/11536/65309 |
顯示於類別: | 畢業論文 |