完整後設資料紀錄
DC 欄位語言
dc.contributor.author謝志宏en_US
dc.contributor.authorHsieh ching honen_US
dc.contributor.author謝宗雍en_US
dc.contributor.authorDr. Hsiehen_US
dc.date.accessioned2014-12-12T02:22:35Z-
dc.date.available2014-12-12T02:22:35Z-
dc.date.issued1999en_US
dc.identifier.urihttp://140.113.39.130/cdrfb3/record/nctu/#NT880159037en_US
dc.identifier.urihttp://hdl.handle.net/11536/65313-
dc.description.abstract以陽極氧化法製備高品質因子的五氧化二鉭薄膜並就其結構與電性量測做研究與討論zh_TW
dc.description.abstractdisscussion of structure and electrical properties of tantalum pentoxide films prepared by anodic oxidationen_US
dc.language.isozh_TWen_US
dc.subject五氧化二鉭zh_TW
dc.subject陽極氧化法zh_TW
dc.subjecttantalum pentoxideen_US
dc.subjectanodic oxidationen_US
dc.title陽極氧化製備五氧化二鉭薄膜及其結構與電性研究zh_TW
dc.titleStructure and electrical properties of tantalum pentoxide films prepared by anodic oxidationen_US
dc.typeThesisen_US
dc.contributor.department材料科學與工程學系zh_TW
顯示於類別:畢業論文