Full metadata record
DC Field | Value | Language |
---|---|---|
dc.contributor.author | Lu, Chung Yu | en_US |
dc.contributor.author | Hilt, Oliver | en_US |
dc.contributor.author | Lossy, Richard | en_US |
dc.contributor.author | Chaturvedi, Nidhi | en_US |
dc.contributor.author | John, Wilfred | en_US |
dc.contributor.author | Chang, Edward Yi | en_US |
dc.contributor.author | Wuerfl, Joachim | en_US |
dc.contributor.author | Trankle, Gunther | en_US |
dc.date.accessioned | 2014-12-08T15:08:27Z | - |
dc.date.available | 2014-12-08T15:08:27Z | - |
dc.date.issued | 2009-11-01 | en_US |
dc.identifier.issn | 0021-4922 | en_US |
dc.identifier.uri | http://dx.doi.org/10.1143/JJAP.48.111003 | en_US |
dc.identifier.uri | http://hdl.handle.net/11536/6531 | - |
dc.description.abstract | A new technique using WSiN film as a protective cap layer of the internal ohmic metallization scheme and the GaN surface was developed to improve the surface morphology of the contact of AlGaN/GaN high electron mobility transistors (HEMTs) After annealing, this layer was selectively removed by patterning and dry etching. Metal contact surfaces covered with WSiN preserved a good surface morphology and edge definition. Moreover, the devices have a saturation current of 1 A/mm and a maximum transconductance of 235 mS/mm When biased at 30 V, the output power density is 5 8 W/mm at 2 GHz These results indicate a damage-free process for the smooth ohmic contacts formation (C) 2009 The Japan Society of Applied Physics | en_US |
dc.language.iso | en_US | en_US |
dc.title | WSiN Cap Layer for Improvement of Ohmic Contact Morphology in AlGaN/GaN High Electron Mobility Transistors | en_US |
dc.type | Article | en_US |
dc.identifier.doi | 10.1143/JJAP.48.111003 | en_US |
dc.identifier.journal | JAPANESE JOURNAL OF APPLIED PHYSICS | en_US |
dc.citation.volume | 48 | en_US |
dc.citation.issue | 11 | en_US |
dc.citation.epage | en_US | |
dc.contributor.department | 材料科學與工程學系 | zh_TW |
dc.contributor.department | Department of Materials Science and Engineering | en_US |
dc.identifier.wosnumber | WOS:000272265300010 | - |
dc.citation.woscount | 0 | - |
Appears in Collections: | Articles |
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