Temperature dependent gain characteristics in GaN-based vertical-cavity surface-emitting lasers

doi:10.1364/OE.17.020149

完整後設資料紀錄

DC 欄位	值	語言
dc.contributor.author	Lu, Tien-Chang	en_US
dc.contributor.author	Cheng, Bo-Siao	en_US
dc.contributor.author	Liu, Mei-Chung	en_US
dc.date.accessioned	2014-12-08T15:08:30Z	-
dc.date.available	2014-12-08T15:08:30Z	-
dc.date.issued	2009-10-26	en_US
dc.identifier.issn	1094-4087	en_US
dc.identifier.uri	http://dx.doi.org/10.1364/OE.17.020149	en_US
dc.identifier.uri	http://hdl.handle.net/11536/6555	-
dc.description.abstract	Temperature dependent gain characteristics and linewidth enhancement factor (alpha-factor) of vertical-cavity surface-emitting lasers with InGaN/GaN multiple quantum wells were studied by measuring the photoluminescence spectra below the threshold condition and analyzed by using the Hakki-Paoli method. The optical gain and differential gain showed a more rapid increase as a function of the injected carriers as temperature decreased. The alpha-factor for the lasing mode was estimated as 2.8 at room temperature and decreased to a value as low as 0.6 at 80 K. (C) 2009 Optical Society of America	en_US
dc.language.iso	en_US	en_US
dc.title	Temperature dependent gain characteristics in GaN-based vertical-cavity surface-emitting lasers	en_US
dc.type	Article	en_US
dc.identifier.doi	10.1364/OE.17.020149	en_US
dc.identifier.journal	OPTICS EXPRESS	en_US
dc.citation.volume	17	en_US
dc.citation.issue	22	en_US
dc.citation.spage	20149	en_US
dc.citation.epage	20154	en_US
dc.contributor.department	光電工程學系	zh_TW
dc.contributor.department	Department of Photonics	en_US
dc.identifier.wosnumber	WOS:000271629200087	-
dc.citation.woscount	1	-
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