标题: | 应用于ULSI成长氧化层前及化学机械研磨后的新溶液清洗 Novel Solutions for Pre-Gate Oxide and Post-CMP Cleaning in ULSI Application |
作者: | 邱子寰 Tzu-Huan Chiu 雷添福 Tan Fu Lei 电子研究所 |
关键字: | 新溶液;清洗;化学机械研磨;novel solution;cleaning;CMP |
公开日期: | 1999 |
摘要: | 在本论文中,我们开发多种应用在长氧化层之前及化学机械研磨之后清洁的新化学溶液。在长氧化层前的清洁方面,使用改善过的单步的清洁可以节省时间及成本;这些新溶夜加在化学机械研磨之后清洁的氨水中也可以达到更好的效果。 新的溶液包括四甲基氢氧化铵(TMAH)、四乙基氢氧化铵(TEAH)、四丙基氢氧化铵(TPAH)及四丁基氢氧化铵(TBAH),这些介面活性剂可以籍由改善晶圆表面的亲水性而得到更好的清洁效果。还有EDTA、草酸及柠檬酸是可以和金属形成化合物的螯合剂。我们针对污染的微粒及金属、清洁过后晶圆表面的平坦度及电性作分析,这些新溶液在清洁效果上确实有改善。TPAH在这些表面活性剂中有较好的去除微粒的能力且可得到较好的电性,而柠檬酸是螯合剂中较好的选择。 In this thesis, various novel chemical solutions for pre-gate oxide and post-CMP cleaning have been studied. For pre-gate oxide cleaning, we can save time and cost by replacing conventional standard cleaning with one-step cleaning which is adding novel solutions into APM (ammonia/peroxide mixed). We also incorporated these solutions into ammonium hydroxide alkaline aqueous solution to enhance the contamination removal efficiency in post-CMP cleaning. These novel solutions include tetraalkylammonium hydroxide with various chain-lengths of hydrocarbon substituents, such as tetramethlyammonium hydroxide (TMAH), tetraethlyammonium hydroxide (TEAH), tetraproplyammonium hydroxide (TPAH) and tetrabutylammonium hydroxide (TBAH). They serve as a surfactant, which can change a hydrophobic surface into a hydrophilic surface to improve particle removal. There are also chelating agents of carboxyl acid group (-COOH), such as ethylenediaminetetraacetic acid (EDTA), citric acid and oxalic acid. They can remove metal by forming stable metal-chelate complexs. Several experimental data such as particle and metallic impurity removal efficiency, surface roughness and electrical properties are analyzed. From the result, the TPAH has the best removal efficiency of particle and metal and electrical characteristics among those surfactants. In addition, the citric acid also has the best particle and metal removal capability among those chelating agents. Abstract (English) ………………………………………………………………. ii Acknowledgment ………………………………………………………………… iv Contents …………………………………………………………………….……. v Table & Figure Captions ………………………………………………………… viii Chapter 1 Introduction 1.1 Background ………………………………………………………. 1 1.2 Motivation …………..……………………………………………. 2 1.3 Organization of the Thesis ………………………………………... 4 Chapter 2 Comparison of Tetraalkylammonium Hydroxide Substituents in Novel One-Step Pre-Gate Oxide Cleaning 2.1 Introduction ……………………………………………………….. 5 2.2 Experimental ……………………………………………………… 6 2.2.1 Materials and Cleaning Solutions …………………………… 6 2.2.2 Capacitor Fabrication Process and the Cleaning Procedure … 7 2.2.3 Instrumental Analysis and Electrical Characterization ……… 8 2.3 Results and Discussions …………………………………………... 9 2.3.1 Effect of Cleaning Solutions on Si Surface …………………. 9 2.3.2 The Physical and Chemical Properties of Si Surface ………. 10 2.3.3 Electrical Properties of Different Cleaning Solutions ……… 13 2.4 Summary …………..……………………………………………. 15 Chapter 3 Comparison of Tetraalkylammonium Hydroxide Substituents in Novel Solution for Post-CMP Cleaning on Poly-Si Films 3.1 Introduction …………..…………………………………………. 38 3.2 Experimental ………..…………………………………………... 39 3.2.1 Materials and Cleaning Solutions …………………………... 39 3.2.2 Capacitor Fabrication Process and the Cleaning Procedure ... 40 3.2.3 Instrumental Analysis and Electrical Characterization …….. 42 3.3 Results and Discussions …………………………………………. 42 3.3.1 Effect of Cleaning Solutions on Polished Poly-Si Surfaces ... 42 3.3.2 The Physical and Chemical Properties of Poly-Si Cleaning after CMP …………………………………………………. 43 3.3.3 Electrical Property for Different Cleaning Solutions ………. 44 3.4 Summary ………………………………………………………… 47 Chapter 4 Comparison of Novel Cleaning Solutions with Various Chelating Agents for Pre-Gate Oxide Cleaning 4.1 Introduction ………………….………………………………….. 61 4.2 Experimental …………………………………………………….. 62 4.2.1 Materials and Cleaning Solutions ……………………….….. 62 4.2.2 Capacitor Fabrication Process and the Cleaning Procedure .. 62 4.2.3 Instrumental Analysis and Electrical Characterization …….. 62 4.3 Results and Discussions …………………………………………. 63 4.3.1 The Physical and Chemical Properties of Si Surface ………. 63 4.3.2 Electrical Properties of Different Cleaning Solutions ……… 64 4.4 Summary ………………………………………………………… 65 Chapter 5 Comparison of Novel Cleaning Solutions with Various Chelating Agents for Post-CMP Cleaning on Poly-Si Film 5.1 Introduction ……………………………………………………… 73 5.2 Experimental …………………………………………………….. 74 5.2.1 Materials and Cleaning Solutions …………………………... 74 5.2.2 Capacitor Fabrication Process and the Cleaning Procedure .. 74 5.2.3 Instrumental Analysis and Electrical Characterization …….. 74 5.3 Results and Discussions………………………………………….. 75 5.3.1 The Physical and Chemical Properties of Poly-Si Cleaning after CMP……………………………………………………. 75 5.3.2 Electrical Property for Different Cleaning Solutions ………. 77 5.4 Summary ………………………………………………………… 78 Chapter 6 Conclusions …………………………………………………...…….. 86 References ………………………………………………………………..…... 88 Vita ………………………………………………………………………………. 92 |
URI: | http://140.113.39.130/cdrfb3/record/nctu/#NT880428074 http://hdl.handle.net/11536/65714 |
显示于类别: | Thesis |