Full metadata record
DC Field | Value | Language |
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dc.contributor.author | 徐榮濱 | en_US |
dc.contributor.author | Jung Pin Hsu | en_US |
dc.contributor.author | 李建平 | en_US |
dc.contributor.author | 胡淑芬 | en_US |
dc.contributor.author | Dr. Chien-Ping Lee | en_US |
dc.contributor.author | Dr. Shu-Fen Hu | en_US |
dc.date.accessioned | 2014-12-12T02:23:15Z | - |
dc.date.available | 2014-12-12T02:23:15Z | - |
dc.date.issued | 1999 | en_US |
dc.identifier.uri | http://140.113.39.130/cdrfb3/record/nctu/#NT880428106 | en_US |
dc.identifier.uri | http://hdl.handle.net/11536/65749 | - |
dc.description.abstract | 單電子電晶體(SET)是奈米級結構中重要的元件,主要的操作原理是利用電荷的庫倫作用力及量子效應。本論文首先將針對SET的原理基礎 – Orthodox theory稍做說明,並介紹單電子電晶體獨特的電性表現,包括庫倫阻斷、導電性振盪、庫倫階梯等,接著進行元件的製作,在製作之前先進行製程及電性的模擬,確定設計想法是否可行,然後再進行製程步驟,而其中關鍵的微影製程是採用電子束微影(EBL)及搭配原子力顯微鏡(AFM)局部氧化兩項最新的技術。 在電子束微影方面,我們在SOI晶片上利用電子束進行微影製程,不直接定義出量子點,而是採用空乏的方式間接產生量子點,並且為了配合電子束微影的解析能力,我們設計了不同尺寸的主動區域,最後得到的量子點大小約為100nm,而且為了提昇電子束微影的解析能力,再針對微影條件加以研究,包括電子束的劑量(微調後約5~6μC/cm2)、光阻的條件(NEB-22A或PMMA、光阻厚度的控制)及Proximity effect等因素。另外在AFM局部氧化技術上,先經由不同材質晶片及相關參數的氧化成果,瞭解影響氧化的各種參數間實際作用的情形,包括在SOI晶片及TiN金屬上均可完成氧化,以及不同偏壓、不同掃瞄參數下都可以觀察到明顯不同的氧化結果。接著搭配電子束微影先製作主動區域,再使用AFM氧化技術在主動區域中的通道部份進行氧化加工,藉由氧化產生的氧化線當作能障,使能障間自然產生量子點,最後成功地製作出尺寸大小約為2μm的量子點元件。 | zh_TW |
dc.description.abstract | Single Electron Transistor is the important device in nanostructure semiconductor. Its operation is based on the Coulomb interaction and quantum confinement of the electronics charges. First of all, we will introduce the single electron theory – Orthodox theory and its special properties including Coulomb Blockade, Conductance Oscillation and Coulomb Staircase. Before fabrication, we do some process and electrical simulations and make sure the idea can work. Among the processes, lithography is the key point. We use two newly techniques - E-Beam Lithography (EBL) and AFM local oxidation to fabricate the transistor. First, by the technique of E-Beam Lithography, we fabricate SET on SOI wafer and achieve quantum dot due to depletion. For the limit resolution of EBL, we design different scale of active region and the quantum dot is about 100nm. For improving the resolution, we study the lithography condition, including the dosage of electron beam(about5~6μC/cm3), the choice of photoresist (NEB22A or PMMA, the thickness of photoresist) and Proximity effect. Next, about the technique of AFM local oxidation, according to the oxidation result, we realize the effect of different factories and make the oxidation on SOI wafer and TiN surface. We get different oxidation results due to different bias and scan velocity. Then combining EBL with AFM local oxidation, we make two oxidation lines as the barriers on the channel of active region and fabricate the quantum dot device successfully. There is a quantum dot about 2 μm between two oxidation lines. We have proved that it can work to combine the techniques of EBL and AFM oxidation to fabricate SET. 英文摘要…………………………………………………………………………….. 致謝………………………………………………………………………………….. 第一章 導論 1-1 元件製程的極致表現 ………………………………………………… 1-2 單電子電晶體簡介 …………………………………………………… 1-3 單電子電晶體的現況 ………………………………………………… 1-4 論文大綱 ……………………………………………………………… 第二章 原理 2-1前言 ……………………………..…………………………………… 2-2 基本假設 ……………………… ……………………………………. 2-3 Orthodox Theory 2-3-1 荷姆赫茲自由能 …………………………………………… 2-3-2 穿隧速率 …………………………………………………… 2-3-3 雙接合點結構 ……………………………………………... 2-3-4 單電子電晶體 ……………………………………………... 2-3-5 模擬方法 ……………………………………………………. 2-3-6 協同共振 ……………..……………………………………. 2-4 總結 ………………………………………………………………….. 第三章 電性模擬與分析 3-1 研究動機 ……….……………………………………………………. 3-2 製程前模擬 … ….………………………………………………….. 3-3 電性模擬 ……………………………………………………………... 3-4 總結 ………………………………………………………………….. 第四章 元件製程 4-1 前言 ………………………………………………………………….. 4-2 電子束微影 …………………………………………………………… 4-3 原子力顯微鏡 ……………………………………………………….. 4-4 製程介紹 4-4-1 SOI晶片 ……………………………………………………… 4-4-2 製程步驟 ……………………………………………………… 4-5 製程成果 4-5-1電子束微影 …………………………………………………… 4-5-2 原子力顯微鏡 ………….……………………………………. 4-5-2-1 AFM氧化 …………………………………………….. 4-5-2-2 元件製作 …………………………………………….. 4-5-3 電性量測 ……………………………………………………… 第五章 未來展望 5-1 前言 …………………………………………………………………. 5-2 困難與挑戰 ………………………………………………………… 5-3 論文總結 ……………………………………………………………. 參考文獻 …………………………………………………………………………. | en_US |
dc.language.iso | zh_TW | en_US |
dc.subject | 單電子電晶體 | zh_TW |
dc.subject | 庫侖阻斷 | zh_TW |
dc.subject | 原子力顯微鏡 | zh_TW |
dc.subject | 電子束微影 | zh_TW |
dc.subject | SET | en_US |
dc.subject | single electron transistor | en_US |
dc.subject | coulomb blockade | en_US |
dc.subject | AFM | en_US |
dc.subject | AFM oxidation | en_US |
dc.subject | electron beam lithography | en_US |
dc.title | 單電子電晶體的製作與分析 | zh_TW |
dc.title | The Fabrication and Analysis of Single Electron Transistor | en_US |
dc.type | Thesis | en_US |
dc.contributor.department | 電子研究所 | zh_TW |
Appears in Collections: | Thesis |