標題: A dual-gate-controlled single-electron transistor using self-aligned polysilicon sidewall spacer gates on silicon-on-insulator nanowire
作者: Hu, SF
Wu, YC
Sung, CL
Chang, CY
Huang, TY
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
關鍵字: nanotechnology;quantum dots (QD);quantum mires;silicon-on-insulator (SOI) technology
公開日期: 1-三月-2004
摘要: A dual-gate-controlled single-electron transistor was fabricated by using self-aligned polysilicon sidewall spacer gates on a silicon-on-insulator nanowire. The quantum dot formed by the electric field effect of the dual-gate structure was miniaturized to smaller than the state-of-the-art feature size, through a combination of electron beam lithography, oxidation, and polysilicon sidewall spacer gate formation processes. The device shows typical MOSFET I-V characteristics at room temperature. However, the Coulomb gap and Coulomb oscillations are clearly observed at 4 K.
URI: http://dx.doi.org/10.1109/TNANO.2003.820784
http://hdl.handle.net/11536/26986
ISSN: 1536-125X
DOI: 10.1109/TNANO.2003.820784
期刊: IEEE TRANSACTIONS ON NANOTECHNOLOGY
Volume: 3
Issue: 1
起始頁: 93
結束頁: 97
顯示於類別:期刊論文


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